Opto Diode Corporation, a division of ITW, and a member of the ITW Photonics Group, announces the second in the AXUV series of multi-element photodiodes.
The AXUV20ELG is a linear array of twenty 3mm² active area pixels (0.75mm x 4.1mm) with 100% internal quantum efficiency (IQE) mounted in a 22-pin, dual in-line windowless package which is shipped in a secure temporary housing to protect the photodiode and wire bonds.
Opto Diode’s new 20-element photodiode provides exceptionally stable response after exposure to high energy radiation but ODC also suggest that this highly sensitive diode is ideal for applications such as Bolometry, the measurement of minute amounts of radiant energy. The AXUV20ELG is also ideal for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity.
The reverse breakdown voltage is typically 25 Volts with a capacitance of 40pF (maximum) per pixel at 25°C and a rise time of 200 nanoseconds. Shunt resistance (per element) is 100MOhm minimum.
Ambient storage and operating temperatures range from -10°C to 40°C, and nitrogen or vacuum storage/operation temperatures range from -20°C to 80°C. The lead-soldering temperature is 260°C with a maximum junction temperature at 70°C.
For more information about Opto Diode’s IRD UV photodiodes, please visit our AXUV series page.