Opto Diode Corporation have formally announced they are obsoleting their full range of 880nm light emitting diodes.
ODC's Liquid Phase Epitaxy (LPE) grown Graded Bandgap GaAlAs LEDs remain the world's highest peak power LEDs for pulses of less than 100µs duration - where the ODC technology can be driven at up to 30 times the DC current rating with good linearity.
However - relatively few applications take advantage of this short pulse capability and the 880nm devices' DC and long-pulse efficiency have fallen behind that of the industry leaders.
As a result ODC are adopting leading-edge 850nm chip technology and will be offering alternatives to their commonly-used standard products. Refer to the Near Infrared LEDs page on our website for a list of replacements and data on the new devices which typically provide twice the output power of the 880nm devices they replace.
AP Technologies will accept orders for the full range of standard 880nm LEDs up to 30th June 2013 with delivery no later than Friday 20th December 2013. High volume OEM customers and those purchasing custom 880nm devices have been notified of timescales for the obsolescence of their parts.
In addition to their standard 850nm LEDs ODC will continue to be able to support custom NIR wavelengths from ~740nm to ~940nm and welcome the opportunity to discuss custom single- and multi-wavelength NIR LED solutions along with options such as integrated monitor photodiodes, high temperature and case-isolated configurations
As ODC intend to close their 880nm wafer fabrication this decision also affects the 880nm narrowband detectors.